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Conferència: Graphene Technology and Devices for Microelectronics Applications

Quan
26/11/2013 de 10:00 a 11:30 (Europe/Madrid / UTC100)
On
Aula de Teleensenyament, al primer pis de l'edifici B3 del Campus Nord de la UPC
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El dimarts 26 de novembre de 2013, a les 10:00, el Professor Max Lemme de la University of Siegen (Alemanya) i del KTH Royal Institute of Technology (Suècia), farà la conferència titulada 'Graphene Technology and Devices for Microelectronics Applications' a l'Aula de Teleensenyament, al primer pis de l'edifici B3 del Campus Nord de la UPC

Abstract
After a brief introduction of the state-of-the art in graphene technology, this talk will discuss several “More than Moore” applications for graphene: hot electron transistors (HETs), photodetectors and nanoelectromechanical (NEMS) pressure sensors.
The HET structures are vertical tunneling-based devices that consist of a metal collector, a highly doped silicon emitter and a graphene base. High quality thermal SiO2 and atomic layer deposited Al2O3 are used as emitter-base (EBI) and base-collector insulators (BCI), respectively. The collector currents are modulated via the base potential (common emitter configuration) achieving ON-OFF current ratios of nearly 105.
Graphene is a semi-metal with a band gap of 0 eV and linear dispersion relation up to +- 1 eV from the kpoint. This means that it can act as a broadband photodetector from UV to visible, to infrared and THz radiation. Gate tunable photodetectors will be discussed in detail in the talk.
The sensitivity of pressure sensors benefits from the extraordinary thinness of graphene. The pressure sensor design consists of a monolayer sheet of graphene suspended over a cavity with air at atmospheric pressure trapped beneath the cavity. When the ambient pressure is changed, the air in the cavity presses or pulls the membrane, straining it. Our sensor design shows high sensitivity when compared with conventional silicon based pressure sensors without the need of a strain gauge. The graphene based sensors work due to the piezoresistive effect, which we have demonstrated both theoretically and experimentally.

Speaker’s biography
Max Lemme received the Dipl.-Ing. (MSc) and Dr.-Ing. (PhD) degree in Electrical Engineering from RWTH Aachen University in Germany. He is currently Heisenberg-Professor for Graphene-based Nanotechnology at the University of Siegen, Germany and Guest-Professor at KTH Royal Institute of Technology, Sweden since 2010. Before joining KTH, he was a research fellow at Harvard University from 2008-2010 and worked for 10 years at nanotechnology start-up AMO GmbH, Germany, as Head of Technology Department. His research interests include non-conventional nano-CMOS devices, novel high-k materials for gate stacks and the technology, devices and circuits based on graphene and other 2D materials. He received a NanoFutur Award by the German Federal Ministry for Education and Research (BMBF) in 2006, a Humboldt-Fellowship in 2007 and an ERC Starting Grant in 2012. He is a Senior Member of the IEEE.